The electronic band structure of quasi-one-dimensional van der Waals semiconductors: the effective hole mass of ZrS3 compared to TiS3. (22nd April 2020)

• Record Type: Journal Article
• Authors: Yi, Hemian; Gilbert, Simeon J; Lipatov, Alexey; Sinitskii, Alexander; Avila, Jose; Abourahma, Jehad; Komesu, Takashi; Asensio, Maria C; Dowben, Peter A
• Is Part Of: Journal of physics. Volume 32:Number 29(2020)
• Publication Date: 2020-04-22
• Subjects: transition metal trichalcogenides -- ZrS3 -- effective mass -- angle-resolved photoemission; Condensed matter -- Periodicals; Matière condensée -- Périodiques; Vaste stoffen; Vloeistoffen; Natuurkunde; Electronic journals; Computer network resources; 530.4105
• DOI: 10.1088/1361-648X/ab832c
• Languages: English
• ISSNs: 0953-8984

Abstract

Abstract: The band structure of the quasi-one-dimensional transition metal trichalcogenide ZrS3 (001) was investigated using nanospot angle resolved photoemission spectroscopy (nanoARPES) and shown to have many similarities with the band structure of TiS3 (001). We find that ZrS3, like TiS3, is strongly n-type with the top of the valence band ∼1.9 eV below the Fermi level, at the center of the surface Brillouin zone. The nanoARPES spectra indicate that the top of the valence band of the ZrS3 (001) is located at Γ ¯ . The band structure of both TiS3 and ZrS3 exhibit strong in-plane anisotropy, which results in a larger hole effective mass along the quasi-one-dimensional chains than perpendicular to them.