Surface termination and Schottky-barrier formation of In4Se3(001). (6th May 2020)

• Record Type: Journal Article
• Authors: Dhingra, Archit; Galiy, Pavlo V; Wang, Lu; Vorobeva, Nataliia S; Lipatov, Alexey; Torres, Angel; Nenchuk, Taras M; Gilbert, Simeon J; Sinitskii, Alexander; Yost, Andrew J; Mei, Wai-Ning; Fukutani, Keisuke; Chen, Jia-Shiang; Dowben, Peter A
• Is Part Of: Semiconductor science and technology. Volume 35:Number 6(2020)
• Publication Date: 2020-05-06
• Subjects: quasi-1D trichalcogenide -- surface termination -- surface-to-bulk core level shift -- Schottky barrier -- In4Se3; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/ab7e45
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: The surface termination of In4 Se3 (001) and the interface of this layered trichalcogenide, with Au, was examined using x-ray photoemission spectroscopy. Low energy electron diffraction indicates that the surface is highly crystalline, but suggests an absence of C2v mirror plane symmetry. The surface termination of the In4 Se3 (001) is found, by angle-resolved x-ray photoemission spectroscopy, to be In, which is consistent with the observed Schottky barrier formation found with this n-type semiconductor. Transistor measurements confirm earlier results from photoemission, suggesting that In4 Se3 (001) is an n-type semiconductor, so that Schottky barrier formation with a large work function metal, such as Au, is expected. The measured low carrier mobilities could be the result of the contacts and would be consistent with Schottky barrier formation.