Corrigendum: Surface termination and Schottky-barrier formation of In4Se3(001) (2020 Semicond. Sci. Technol.35 065009). (20th May 2021)

Record Type:: Journal Article
Title:: Corrigendum: Surface termination and Schottky-barrier formation of In4Se3(001) (2020 Semicond. Sci. Technol.35 065009). (20th May 2021)
Main Title:: Corrigendum: Surface termination and Schottky-barrier formation of In4Se3(001) (2020 Semicond. Sci. Technol.35 065009)
Authors:: Dhingra, Archit
Galiy, Pavlo V
Wang, Lu
Vorobeva, Nataliia S
Lipatov, Alexey
Torres, Angel
Nenchuk, Taras M
Gilbert, Simeon J
Sinitskii, Alexander
Yost, Andrew J
Mei, Wai-Ning
Fukutani, Keisuke
Chen, Jia-Shiang
Dowben, Peter A
Abstract:
Is Part Of:: Semiconductor science and technology. Volume 36:Number 6(2021)
Journal:: Semiconductor science and technology
Issue:: Volume 36:Number 6(2021)
Issue Display:: Volume 36, Issue 6 (2021)
Year:: 2021
Volume:: 36
Issue:: 6
Issue Sort Value:: 2021-0036-0006-0000
Page Start:
Page End:
Publication Date:: 2021-05-20
Subjects:: Semiconductors -- Periodicals
621.38152
Journal URLs:: http://iopscience.iop.org/0268-1242/1 ↗
http://ioppublishing.org/ ↗
DOI:: 10.1088/1361-6641/abf9e7 ↗
Languages:: English
ISSNs:: 0268-1242
Deposit Type:: Legaldeposit
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗
Physical Locations:: British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store
Ingest File:: 16226.xml