1. Comparative High-Resolution X-Ray Diffraction Analysis of GaN/AlGaN Heterostructure on Al2O3 and Si (111) Substrate Grown by Plasma Assisted Molecular Beam Epitaxy. Issue 1754 (2015) Authors: Jana, Sanjay Kr.; Ghosh, Saptarsi; Dinara, Syed Mukulika; Chakraorty, Apurba; Biswas, D. Editors: Barabash, R.; Benning, L.G.; Genc, A.; Kim, Y.; Lereu, A.; Li, D.; Lienert, U.; Liss, K.D.; Ohnuma, M.; Ovchinnikova, O.; Passian, A.; Rimer, J.D.; Tetard, L.; Thundat, T.; Zenobi, R.; Zorba, V. Journal: MRS proceedings Issue: Issue 1754:(2015) Page Start: 129 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Comparative High-Resolution X-Ray Diffraction Analysis of GaN/AlGaN Heterostructure on Al2O3 and Si (111) Substrate Grown by Plasma Assisted Molecular Beam Epitaxy. Issue 1754 (7th May 2015) Authors: Jana, Sanjay Kr.; Ghosh, Saptarsi; Dinara, Syed Mukulika; Chakraorty, Apurba; Biswas, D. Editors: Barabash, R.; Benning, L.G.; Genc, A.; Kim, Y.; Lereu, A.; Li, D.; Lienert, U.; Liss, K.D.; Ohnuma, M.; Ovchinnikova, O.; Passian, A.; Rimer, J.D.; Tetard, L.; Thundat, T.; Zenobi, R.; Zorba, V. Journal: MRS proceedings Issue: Issue 1754:(2015) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Complications in silane-assisted GaN nanowire growth. Issue 9 (20th April 2023) Authors: Jiang, Nian; Ghosh, Saptarsi; Frentrup, Martin; Fairclough, Simon M.; Loeto, Kagiso; Kusch, Gunnar; Oliver, Rachel A.; Joyce, Hannah J. Journal: Nanoscale advances Issue: Volume 5:Issue 9(2023) Page Start: 2610 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Design of step-graded AlGaN buffers for GaN-on-Si heterostructures grown by MOCVD. (1st April 2023) Authors: Ghosh, Saptarsi; Hinz, Alexander M; Frentrup, Martin; Alam, Saiful; Wallis, David J; Oliver, Rachel A Journal: Semiconductor science and technology Issue: Volume 38:Number 4(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Effect of trapped charge in AlGaN/GaN and AlGaN/InGaN/GaN heterostructure by temperature dependent threshold voltage analysis. (January 2018) Authors: Chakraborty, Apurba; Ghosh, Saptarsi; Mukhopadhyay, Partha; Das, Subhashis; Bag, Ankush; Biswas, Dhrubes Journal: Superlattices and microstructures Issue: Volume 113(2018) Page Start: 147 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Elimination of V-shaped pits in InGaN/GaN/AlN/GaN heterostructure by metal modulation growth technique. (5th February 2018) Authors: Chakraborty, Apurba; Bag, Ankush; Mukhopadhyay, Partha; Ghosh, Saptarsi; Biswas, Dhrubes Journal: Semiconductor science and technology Issue: Volume 33:Number 3(2018:Mar.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Fowler–Nordheim Tunnelling Contribution in AlGaN/GaN on Si (111) Schottky Current. Issue 1 (2nd January 2016) Authors: Bag, Ankush; Das, Palash; Ghosh, Saptarsi; Mukhopadhyay, Partha; Dinara, Syed Mukulika; Kumar, Rahul; Chakraborty, Apurba; Biswas, Dhrubes Journal: IETE technical review Issue: Volume 33:Issue 1(2016) Page Start: 7 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Influence of growth morphology on electrical and thermal modeling of AlGaN/GaN HEMT on sapphire and silicon. (February 2015) Authors: Mukhopadhyay, Partha; Banerjee, Utsav; Bag, Ankush; Ghosh, Saptarsi; Biswas, Dhrubes Journal: Solid-state electronics Issue: Volume 104(2015) Page Start: 101 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Novel Analytical model for current-voltage characteristics and transconductance of undoped AlGaN/GaN MISHFETs and performance comparison with different high-k dielectrics. Issue 1 (17th February 2015) Authors: Ganta, Rangababu; Ghosh, Saptarsi; Biswas, Dhrubes Journal: IOP conference series Issue: Volume 73:Issue 1(2015) Page Start: 012144 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. On the different origins of electrical parameter degradation in reverse‐bias stressed AlGaN/GaN HEMTs. Issue 6 (3rd February 2016) Authors: Ghosh, Saptarsi; Dinara, Syed M.; Mahata, Mihir; Das, Subhashis; Mukhopadhyay, Partha; Jana, Sanjay Kumar; Biswas, Dhrubes Journal: Physica status solidi Issue: Volume 213:Issue 6(2016:Jun.) Page Start: 1559 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗