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Author/Creator Fu, Deyi

1. A 4H-SiC semi-super-junction shielded trench MOSFET: p-pillar is grounded to optimize the electric field characteristics. (1st December 2022)

Authors:
Wang, Xiaojie; Shen, Zhanwei; Zhang, Guoliang; Miao, Yuyang; Li, Tiange; Zhu, Xiaogang; Cai, Jiafa; Hong, Rongdun; Chen, Xiaping; Lin, Dingqu; Wu, Shaoxiong; Zhang, Yuning; Fu, Deyi; Wu, Zhengyun; Zhang, Feng
Journal:
Journal of semiconductors
Issue:
Volume 43:Number 12(2022)
Page Start:
Record Type:
Journal Article
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Available online (eLD content is only available in our Reading Rooms) ↗

2. A 4H-SiC semi-super-junction shielded trench MOSFET: p-pillar is grounded to optimize the electric field characteristics. (1st December 2022)

Authors:
Wang, Xiaojie; Shen, Zhanwei; Zhang, Guoliang; Miao, Yuyang; Li, Tiange; Zhu, Xiaogang; Cai, Jiafa; Hong, Rongdun; Chen, Xiaping; Lin, Dingqu; Wu, Shaoxiong; Zhang, Yuning; Fu, Deyi; Wu, Zhengyun; Zhang, Feng
Journal:
Journal of semiconductors
Issue:
Volume 43:Number 12(2022)
Page Start:
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗

3. A 4H-SiC semi-super-junction shielded trench MOSFET: p-pillar is grounded to optimize the electric field characteristics. (1st December 2022)

Authors:
Wang, Xiaojie; Shen, Zhanwei; Zhang, Guoliang; Miao, Yuyang; Li, Tiange; Zhu, Xiaogang; Cai, Jiafa; Hong, Rongdun; Chen, Xiaping; Lin, Dingqu; Wu, Shaoxiong; Zhang, Yuning; Fu, Deyi; Wu, Zhengyun; Zhang, Feng
Journal:
Journal of semiconductors
Issue:
Volume 43:Number 12(2022)
Page Start:
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗

4. A 4H-SiC semi-super-junction shielded trench MOSFET: p-pillar is grounded to optimize the electric field characteristics. (1st December 2022)

Authors:
Wang, Xiaojie; Shen, Zhanwei; Zhang, Guoliang; Miao, Yuyang; Li, Tiange; Zhu, Xiaogang; Cai, Jiafa; Hong, Rongdun; Chen, Xiaping; Lin, Dingqu; Wu, Shaoxiong; Zhang, Yuning; Fu, Deyi; Wu, Zhengyun; Zhang, Feng
Journal:
Journal of semiconductors
Issue:
Volume 43:Number 12(2022)
Page Start:
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗

6. Directly Metering Light Absorption and Heat Transfer in Single Nanowires Using Metal–Insulator Transition in VO2. Issue 3 (2nd January 2015)

Authors:
Cheng, Chun; Fu, Deyi; Liu, Kai; Guo, Hua; Xu, Shuigang; Ryu, Sang‐Gil; Ho, Otto; Zhou, Jian; Fan, Wen; Bao, Wei; Salmeron, Miquel; Wang, Ning; Grigoropoulos, Costas P.; Wu, Junqiao
Journal:
Advanced optical materials
Issue:
Volume 3:Issue 3(2015:Mar.)
Page Start:
336
Record Type:
Journal Article
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Available online (eLD content is only available in our Reading Rooms) ↗

7. Ferroelectrically Gated Atomically Thin Transition‐Metal Dichalcogenides as Nonvolatile Memory. Issue 15 (19th February 2016)

Authors:
Ko, Changhyun; Lee, Yeonbae; Chen, Yabin; Suh, Joonki; Fu, Deyi; Suslu, Aslihan; Lee, Sangwook; Clarkson, James David; Choe, Hwan Sung; Tongay, Sefaatin; Ramesh, Ramamoorthy; Wu, Junqiao
Journal:
Advanced materials
Issue:
Volume 28:Issue 15(2016)
Page Start:
2923
Record Type:
Journal Article
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10. Metal‐Insulator Transitions: Crossing Thermal Lubricity and Electronic Effects in Friction: Vanadium Dioxide under the Metal–Insulator Transition (Adv. Mater. Interfaces 2/2016). Issue 2 (21st January 2016)

Authors:
Kim, Jong Hun; Fu, Deyi; Kwon, Sangku; Liu, Kai; Wu, Junqiao; Park, Jeong Young
Journal:
Advanced materials interfaces
Issue:
Volume 3:Issue 2(2016)
Page Start:
n/a
Record Type:
Journal Article
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Available online (eLD content is only available in our Reading Rooms) ↗