Ferroelectrically Gated Atomically Thin Transition‐Metal Dichalcogenides as Nonvolatile Memory. Issue 15 (19th February 2016)

• Record Type: Journal Article
• Authors: Ko, Changhyun; Lee, Yeonbae; Chen, Yabin; Suh, Joonki; Fu, Deyi; Suslu, Aslihan; Lee, Sangwook; Clarkson, James David; Choe, Hwan Sung; Tongay, Sefaatin; Ramesh, Ramamoorthy; Wu, Junqiao
• Is Part Of: Advanced materials. Volume 28:Issue 15(2016)
• Page Start: 2923
• Page End: 2930
• Publication Date: 2016-02-19
• Subjects: 2D materials -- ferroelectrics -- field‐effect transistors -- nonvolatile memory -- transition‐metal dichalcogenides; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201504779
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : Ferroelectrically driven nonvolatile memory is demonstrated by interfacing 2D semiconductors and ferroelectric thin films, exhibiting superior memory performance comparable to existing thin‐film ferroelectric field‐effect transistors. An optical memory effect is also observed with large modulation of photoluminescence tuned by the ferroelectric gating, potentially finding applications in optoelectronics and valleytronics.