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3. Comprehensive Raman study of orthorhombic κ/ε-Ga2O3 and the impact of rotational domains. Issue 40 (29th September 2021)

4. Deep and shallow electronic states associated to doping, contamination and intrinsic defects in ε-Ga2O3 epilayers. (February 2022)

5. Growth, characterization, and properties of bulk SnO2 single crystals. Issue 1 (4th October 2013)

9. N-Type doping of ε-Ga2O3 epilayers by high-temperature tin diffusion. (15th May 2021)

10. Silane‐Mediated Expansion of Domains in Si‐Doped κ‐Ga2O3 Epitaxy and its Impact on the In‐Plane Electronic Conduction. (7th November 2022)