N-Type doping of ε-Ga2O3 epilayers by high-temperature tin diffusion. (15th May 2021)

• Record Type: Journal Article
• Authors: Bosio, Alessio; Parisini, Antonella; Lamperti, Alessio; Borelli, Carmine; Fornasini, Laura; Bosi, Matteo; Cora, Ildikò; Fogarassy, Zsolt; Pécz, Béla; Zolnai, Zsolt; Németh, Attila; Vantaggio, Salvatore; Fornari, Roberto
• Is Part Of: Acta materialia. Volume 210(2021)
• Publication Date: 2021-05-15
• Subjects: ε-Ga2O3 -- Sn-doping -- Diffusion -- Electrical characterization; Materials -- Periodicals; Materials science -- Periodicals; Materials -- Mechanical properties -- Periodicals; Metallurgy -- Periodicals; Chemistry, Inorganic -- Periodicals; 620.112
• DOI: 10.1016/j.actamat.2021.116848
• Languages: English
• ISSNs: 1359-6454

Abstract

Abstract: The good control of the n -type doping is a key issue for the fabrication of efficient devices based on ε-Ga2 O3 epilayers. In this work we studied the possibility of doping the ε-Ga2 O3 thin films, epitaxially grown on c -oriented sapphire by metal-organic chemical vapor deposition, by means of a post-deposition treatment. For the first time, the n -type doping was achieved by depositing a tin-rich SnO2 film on top of the ε-Ga2 O3 layer and keeping this bi-layer system for 4 h at a temperature of 600 °C in an evacuated furnace. The diffusion of Sn atoms into the ε-Ga2 O3 film is evidenced by time-of-flight secondary-ion mass spectrometry depth profiles. Room-temperature resistivity of the order of 1 Ωcm is obtained and the electrical characterization revealed a conduction mechanism based on variable range hopping, according to the Mott's model. Graphical abstract: Image, graphical abstract