A Metal-Oxide Contact to ε-Ga2O3 Epitaxial Films and Relevant Conduction Mechanism. (18th May 2020)

• Record Type: Journal Article
• Authors: Bosio, Alessio; Borelli, Carmine; Parisini, Antonella; Pavesi, Maura; Vantaggio, Salvatore; Fornari, Roberto
• Is Part Of: ECS journal of solid state science and technology. Volume 9:Number 5(2020)
• Publication Date: 2020-05-18
• Subjects: Ohmic contacts -- ε-Ga2O3 -- wide bandgap semiconductors -- electrical characterization -- Sputtering -- Thin film growth -- MOCVD; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2162-8777/ab8f37
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : In this work, the conduction mechanisms across novel contacts to epitaxial films of pure phase epsilon-Ga2 O3 ( ε -Ga2 O3 ) were investigated. Different structures made by sputtered metal and oxide thin films were tested as electrical contacts. I-V characteristics show heterogeneous behaviors, revealing different conduction mechanisms according to the applied bias. The results are interesting as they offer a viable method to obtain ohmic contacts on ε -Ga2 O3, which is less studied than other gallium oxide polymorphs but may find application in new electronic and optoelectronic devices. The newly developed ohmic contacts allow to fabricate simple test devices and assess the potential of this material.