1. Characterization and modeling of dynamic variability induced by BTI in nano-scaled transistors. (January 2018) Authors: Garros, Xavier; Laurent, Antoine; Subirats, Alexandre; Federspiel, X.; Vincent, E.; Reimbold, Gilles Journal: Microelectronics and reliability Issue: Volume 80(2018) Page Start: 100 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Characterization of Low Drop-Out during ageing and design for yield. (September 2017) Authors: Lajmi, R.; Cacho, F.; Lauga Larroze, E.; Bourdel, S.; Benech, P.; Huard, V.; Federspiel, X. Journal: Microelectronics and reliability Issue: Volume 76/77(2017) Page Start: 92 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Modeling hot carrier damage interaction between on and off modes for 28 nm AC RF applications. (November 2021) Authors: Garba-Seybou, T.; Bravaix, A.; Federspiel, X.; Cacho, F. Journal: Microelectronics and reliability Issue: Volume 126(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. New NBTI models for degradation and relaxation kinetics valid over extended temperature and stress/recovery ranges. (August 2018) Authors: Nouguier, D.; Federspiel, X.; Ghibaudo, G.; Rafik, M.; Roy, D. Journal: Microelectronics and reliability Issue: Volume 87(2018) Page Start: 106 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. New perspectives in defect centric model for NBTI reliability. (July 2019) Authors: Nouguier, D.; Ghibaudo, G.; Federspiel, X.; Rafik, M.; Roy, D. Journal: Microelectronics and reliability Issue: Volume 98(2019) Page Start: 119 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. On the cumulative distribution function of the defect centric model for BTI reliability. (January 2019) Authors: Nouguier, D.; Pananakakis, G.; Federspiel, X.; Rafik, M.; Roy, D.; Ghibaudo, G. Journal: Microelectronics and reliability Issue: Volume 92(2019) Page Start: 168 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Performance vs. reliability adaptive body bias scheme in 28 nm & 14 nm UTBB FDSOI nodes. (September 2016) Authors: Ndiaye, C.; Huard, V.; Federspiel, X.; Cacho, F.; Bravaix, A. Journal: Microelectronics and reliability Issue: Volume 64(2016) Page Start: 158 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Performance vs. reliability adaptive body bias scheme in 28 nm & 14 nm UTBB FDSOI nodes. (September 2016) Authors: Ndiaye, C.; Huard, V.; Federspiel, X.; Cacho, F.; Bravaix, A. Journal: Microelectronics and reliability Issue: Volume 64(2016) Page Start: 158 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Potentiality of healing techniques in hot-carrier damaged 28 nm FDSOI CMOS nodes. (September 2016) Authors: Bravaix, A.; Cacho, F.; Federspiel, X.; Ndiaye, C.; Mhira, S.; Huard, V. Journal: Microelectronics and reliability Issue: Volume 64(2016) Page Start: 163 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Potentiality of healing techniques in hot-carrier damaged 28 nm FDSOI CMOS nodes. (September 2016) Authors: Bravaix, A.; Cacho, F.; Federspiel, X.; Ndiaye, C.; Mhira, S.; Huard, V. Journal: Microelectronics and reliability Issue: Volume 64(2016) Page Start: 163 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗