On the cumulative distribution function of the defect centric model for BTI reliability. (January 2019)

• Record Type: Journal Article
• Authors: Nouguier, D.; Pananakakis, G.; Federspiel, X.; Rafik, M.; Roy, D.; Ghibaudo, G.
• Is Part Of: Microelectronics and reliability. Volume 92(2019)
• Page Start: 168
• Page End: 171
• Publication Date: 2019-01
• Subjects: Reliability -- Cumulative distribution function -- Bias temperature instability -- Defect centric model; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2018.12.003
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: The validity of the existing cumulative distribution function (CDF) formulas for the defect centric model (DCM) is discussed, especially in the low defect number regime (defect number < 3). After finding their limitations, we propose an improved DCM CDF formula which well accounts for the low defect number regime, becoming important in advanced CMOS technologies with scaled devices. The benefits of the revisited DCM CDF formula are experimentally demonstrated on pMOS devices from 28 nm FDSOI technology subjected to BTI stress as well as on Monte Carlo simulated Vth data.