New NBTI models for degradation and relaxation kinetics valid over extended temperature and stress/recovery ranges. (August 2018)

• Record Type: Journal Article
• Authors: Nouguier, D.; Federspiel, X.; Ghibaudo, G.; Rafik, M.; Roy, D.
• Is Part Of: Microelectronics and reliability. Volume 87(2018)
• Page Start: 106
• Page End: 112
• Publication Date: 2018-08
• Subjects: FDSOI -- CMOS -- Fast measurement -- Temperature -- Recovery -- Stress -- Vgrecovery -- NBTI -- Compact model -- Reliability; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2018.04.009
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: In this paper we present NBTI stress and recovery effects measured on PFET devices issued from various FDSOI technologies. NBTI degradation and recovery subsequent to DC stress are measured at the μs time scale. After in-depth analysis of temperature and stress/recovery bias effects, we propose new NBTI models for degradation and recovery kinetics including temperature, Vgstress and Vgrecovery dependencies. These models are finally validated on different technologies and various experimental conditions. Highlights: NBTI stress and recovery effects measured on PFET devices issued from various FDSOI technologies. NBTI degradation and recovery subsequent to DC stress are measured at the μs time scale. New NBTI models for degradation and recovery kinetics including temperature, Vgstress and Vgrecovery dependencies are proposed. These models are validated on different technologies and various experimental conditions.