1. (Invited) Epitaxial CVD Growth of Ultra-Thin Si Passivation Layers on Strained Ge Fin Structures. (1st August 2017) Authors: Loo, Roger; Arimura, Hiroaki; Cott, Daire J.; Witters, Liesbeth; Pourtois, Geoffrey; Schulze, Andreas; Douhard, Bastien; Vanherle, Wendy; Eneman, Geert; Richard, Olivier; Favia, Paola; Mitard, Jerome; Mocuta, Dan; Langer, Robert; Collaert, Nadine Journal: ECS transactions Issue: Volume 80:Number 4(2017) Page Start: 241 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. (Invited) Very Low Temperature Epitaxy of Group-IV Semiconductors for Use in FinFET, Stacked Nanowires and Monolithic 3D Integration. (20th July 2018) Authors: Porret, Clement; Hikavyy, Andriy Yakovitch; Gomez Granados, Juan Fernando; Baudot, Sylvain; Vohra, Anurag; Kunert, Bernardette; Douhard, Bastien; Bogdanowicz, Janusz; Schaekers, Marc; Kohen, David; Margetis, Joe; Tolle, John; Lima, Lucas; Sammak, Amir; Scappucci, Giordano; Rosseel, Erik; Langer, ... Journal: ECS transactions Issue: Volume 86:Number 7(2018) Page Start: 163 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Contact Resistivity of Highly Doped Si:P, Si:As, and Si:P:As Epi Layers for Source/Drain Epitaxy. (8th September 2020) Authors: Rosseel, Erik; Porret, Clement; Hikavyy, Andriy Yakovitch; Loo, Roger; Tirrito, Matteo; Douhard, Bastien; Richard, Olivier; Horiguchi, Naoto; Khazaka, Rami Journal: ECS transactions Issue: Volume 98:Number 5(2020) Page Start: 37 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Influence of Doping and Tunneling Interface Stoichiometry on n+In0.5Ga0.5As/p+GaAs0.5Sb0.5 Esaki Diode Behavior. (25th April 2016) Authors: El Kazzi, Salim; Alireza, A; Bordallo, Caio Cesar Mendes; Smets, Quentin; Desplanque, Ludovic; Wallart, Xavier; Richard, Olivier; Douhard, Bastien; Verhulst, Anne; Collaert, Nadine; Merckling, Clement; Heyns, Marc; Thean, Aaron Journal: ECS transactions Issue: Volume 72:Number 3(2016) Page Start: 73 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Investigation of Low Temperature Epitaxial SiGe:P in View of Source/Drain Application for 5nm Technology Node and Below. (8th September 2020) Authors: Hikavyy, Andriy Yakovitch; Porret, Clement; Vohra, Anurag; Ayyad, Mustafa; Douhard, Bastien; Loo, Roger Journal: ECS transactions Issue: Volume 98:Number 5(2020) Page Start: 43 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Low‐Temperature Selective Growth of Heavily Boron‐Doped Germanium Source/Drain Layers for Advanced pMOS Devices. Issue 3 (11th November 2019) Authors: Porret, Clement; Vohra, Anurag; Nakazaki, Nobuya; Hikavyy, Andriy; Douhard, Bastien; Meersschaut, Johan; Bogdanowicz, Janusz; Rosseel, Erik; Pourtois, Geoffrey; Langer, Robert; Loo, Roger Other Names: Tanaka Masaaki guestEditor.; Sugiyama Masakazu guestEditor.; Fujii Takuro guestEditor.; Ohya Shinobu guestEditor. Journal: Physica status solidi Issue: Volume 217:Issue 3(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Source/Drain Materials for Ge nMOS Devices: Phosphorus Activation in Epitaxial Si, Ge, Ge1−xSnx and SiyGe1−x−ySnx. (7th May 2020) Authors: Vohra, Anurag; Makkonen, Ilja; Pourtois, Geoffrey; Slotte, Jonatan; Porret, Clement; Rosseel, Erik; Khanam, Afrina; Tirrito, Matteo; Douhard, Bastien; Loo, Roger; Vandervorst, Wilfried Journal: ECS journal of solid state science and technology Issue: Volume 9:Number 4(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Suppression of boron incorporation at the early growth phases of boron‐doped diamond thin films. Issue 11 (22nd July 2015) Authors: Tsigkourakos, Menelaos; Hantschel, Thomas; Xu, Zheng; Douhard, Bastien; Meersschaut, Johan; Zou, Yiming; Larsson, Karin; Boman, Mats; Vandervorst, Wilfried Journal: Physica status solidi Issue: Volume 212:Issue 11(2015:Nov.) Page Start: 2595 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. The Impact of Dummy Gate Processing on Si-Cap-Free SiGe Passivation: A Physical Characterization Study on Strained SiGe 25% and 45%. (15th August 2017) Authors: Wostyn, Kurt; Ragnarsson, Lars-Åke; Schram, Tom; Witters, Liesbeth; Conard, Thierry; Douhard, Bastien; Vanhaeren, Danielle; Holsteyns, Frank; Vandervorst, Wilfried; Horiguchi, Naoto Journal: ECS transactions Issue: Volume 80:Number 2(2017) Page Start: 155 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗