Contact Resistivity of Highly Doped Si:P, Si:As, and Si:P:As Epi Layers for Source/Drain Epitaxy. (8th September 2020)

• Record Type: Journal Article
• Authors: Rosseel, Erik; Porret, Clement; Hikavyy, Andriy Yakovitch; Loo, Roger; Tirrito, Matteo; Douhard, Bastien; Richard, Olivier; Horiguchi, Naoto; Khazaka, Rami
• Is Part Of: ECS transactions. Volume 98:Number 5(2020)
• Page Start: 37
• Page End: 42
• Publication Date: 2020-09-08
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/09805.0037ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : In this work we report on the contact resistivity of highly doped epitaxial Si:P, Si:As and Si:P:As layers grown on 300 mm Si (100) substrates. The contact resistivity was extracted using a Multi-Ring Circular Transmission Line Model for a Ti based contacting scheme. Both selective and non-selective epitaxy processes were used and the effect of a post-epitaxy millisecond laser anneal was studied. Excellent contact resistivities down to ~2E-9 Ohm.cm 2 could be found at high doping levels. A clear correlation was observed between the resistivity/contact resistivity and activation levels obtained by micro-Hall measurements. Although As doping is not bringing substantially lower contact resistivities compared to P doping, we observe a small beneficial effect. As also remains an attractive dopant for extension liners because of its lower diffusion constant.