1. Cesium/Xenon dual beam sputtering in a Cameca instrument. (22nd September 2014) Authors: Pureti, R.; Douhard, B.; Joris, D.; Merkulov, A.; Vandervorst, W.; Lee, Yeonhee; Moon, DaeWon; Kang, Hee Jae; Kim, Kyung Joong; Lee, Tae Geol; Lee, Jae Cheol; Yi, Keewook; Hong, Tae Eun Journal: Surface and interface analysis Issue: Volume 46:Number 1(2014:Jan.) Page Start: 25 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Editors' Choice—Epitaxial CVD Growth of Ultra-Thin Si Passivation Layers on Strained Ge Fin Structures. (1st January 2018) Authors: Loo, R.; Arimura, H.; Cott, D.; Witters, L.; Pourtois, G.; Schulze, A.; Douhard, B.; Vanherle, W.; Eneman, G.; Richard, O.; Favia, P.; Mitard, J.; Mocuta, D.; Langer, R.; Collaert, N. Journal: ECS journal of solid state science and technology Issue: Volume 7:Number 2(2018) Page Start: P66 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Editors' Choice—Epitaxial CVD Growth of Ultra-Thin Si Passivation Layers on Strained Ge Fin Structures. (20th January 2018) Authors: Loo, R.; Arimura, H.; Cott, D.; Witters, L.; Pourtois, G.; Schulze, A.; Douhard, B.; Vanherle, W.; Eneman, G.; Richard, O.; Favia, P.; Mitard, J.; Mocuta, D.; Langer, R.; Collaert, N. Journal: ECS journal of solid state science and technology Issue: Volume 7:Number 2(2018) Page Start: P66 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Very Low Temperature Epitaxy of Group-IV Semiconductors for Use in FinFET, Stacked Nanowires and Monolithic 3D Integration. (12th July 2019) Authors: Porret, C.; Hikavyy, A.; Granados, J. F. Gomez; Baudot, S.; Vohra, A.; Kunert, B.; Douhard, B.; Bogdanowicz, J.; Schaekers, M.; Kohen, D.; Margetis, J.; Tolle, J.; Lima, L. P. B.; Sammak, A.; Scappucci, G.; Rosseel, E.; Langer, R.; Loo, R. Journal: ECS journal of solid state science and technology Issue: Volume 8:Number 8(2019) Page Start: P392 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Very Low Temperature Epitaxy of Group-IV Semiconductors for Use in FinFET, Stacked Nanowires and Monolithic 3D Integration. (1st January 2019) Authors: Porret, C.; Hikavyy, A.; Granados, J. F. Gomez; Baudot, S.; Vohra, A.; Kunert, B.; Douhard, B.; Bogdanowicz, J.; Schaekers, M.; Kohen, D.; Margetis, J.; Tolle, J.; Lima, L. P. B.; Sammak, A.; Scappucci, G.; Rosseel, E.; Langer, R.; Loo, R. Journal: ECS journal of solid state science and technology Issue: Volume 8:Number 8(2019) Page Start: P392 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗