1. A 800 V β‐Ga2O3 Metal–Oxide–Semiconductor Field‐Effect Transistor with High‐Power Figure of Merit of Over 86.3 MW cm−2. Issue 20 (22nd August 2019) Authors: Feng, Zhaoqing; Cai, Yuncong; Yan, Guangshuo; Hu, Zhuangzhuang; Dang, Kui; Zhang, Yanni; Lu, Zhijun; Cheng, Hongjuan; Lian, Xiaozheng; Xu, Yongkuan; Zhang, Chunfu; Feng, Qian; Zhou, Hong; Zhang, Jincheng; Hao, Yue Journal: Physica status solidi Issue: Volume 216:Issue 20(2019) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Design of perfect electrical conductor wall‐loaded 2.45 GHz high‐efficiency rectenna. Issue 3 (26th December 2018) Authors: Zheng, Gengqi; Dang, Kui; Sun, Baohua; Zhang, Jincheng Journal: International journal of RF and microwave computer-aided engineering Issue: Volume 29:Issue 3(2019) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Gamma irradiation impact on GaN quasi-vertical Schottky barrier diodes. (11th November 2019) Authors: Bian, Zhaoke; Su, Kai; Zhang, Jincheng; Zhao, Shenglei; Zhou, Hong; Zhang, Weihang; Zhang, Yachao; Zhang, Tao; Chen, Jiabo; Dang, Kui; Ning, Jing; Hao, Yue Journal: Journal of physics Issue: Volume 53:Number 4(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. High-performance lateral GaN Schottky barrier diode on silicon substrate with low turn-on voltage of 0.31 V, high breakdown voltage of 2.65 kV and high-power figure-of-merit of 2.65 GW cm−2. (19th March 2019) Authors: Zhang, Tao; Zhang, Jincheng; Zhou, Hong; Zhang, Yachao; Chen, Tangsheng; Zhang, Kai; Wang, Yi; Dang, Kui; Bian, Zhaoke; Duan, Xiaoling; Ning, Jing; Zhao, Shenglei; Hao, Yue Journal: Applied physics express Issue: Volume 12:Number 4(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. High-performance quasi-vertical GaN Schottky diode with low turn-on voltage. (January 2019) Authors: Bian, Zhao-Ke; Zhou, Hong; Xu, Sheng-Rui; Zhang, Tao; Dang, Kui; Chen, Jia-Bo; Zhang, Jin-Cheng; Hao, Yue Journal: Superlattices and microstructures Issue: Volume 125(2019) Page Start: 295 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗