High-performance quasi-vertical GaN Schottky diode with low turn-on voltage. (January 2019)

• Record Type: Journal Article
• Authors: Bian, Zhao-Ke; Zhou, Hong; Xu, Sheng-Rui; Zhang, Tao; Dang, Kui; Chen, Jia-Bo; Zhang, Jin-Cheng; Hao, Yue
• Is Part Of: Superlattices and microstructures. Volume 125(2019)
• Page Start: 295
• Page End: 301
• Publication Date: 2019-01
• Subjects: Gallium nitride (GaN) -- Quasi-vertical -- Schottky barrier diode (SBD) -- Low turn-on voltage; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2018.09.020
• Languages: English
• ISSNs: 0749-6036

Abstract

Abstract: In this letter, we demonstrate high performance GaN vertical Schottky diode on sapphire substrate. With optimized device structure and adopting low dislocation patterned sapphire substrate (PSS), a high DC performance with low turn-on voltage of 0.45 V, on-resistance of 0.084 mΩ cm 2 and breakdown voltage above 100 V is achieved at a 6 × 100 μm 2 anode size. Meanwhile, two types of GaN Schottky barrier diode (SBD) with different anode area were fabricated to investigate its influence on device characteristics. We have observed a larger current density and smaller leakage current with reducing the anode size, contributing to a more compact design for cost reduction. Highlights: The lowest turn-on voltage of 0.45 V and for the Ni/GaN vertical schottky diode has achieved. Optimized device structure was adopted to increase the forward current density. Patterned sapphire substrate was used to decrease the dislocation density and reduce the leakage current.