A 800 V β‐Ga2O3 Metal–Oxide–Semiconductor Field‐Effect Transistor with High‐Power Figure of Merit of Over 86.3 MW cm−2. Issue 20 (22nd August 2019)

• Record Type: Journal Article
• Authors: Feng, Zhaoqing; Cai, Yuncong; Yan, Guangshuo; Hu, Zhuangzhuang; Dang, Kui; Zhang, Yanni; Lu, Zhijun; Cheng, Hongjuan; Lian, Xiaozheng; Xu, Yongkuan; Zhang, Chunfu; Feng, Qian; Zhou, Hong; Zhang, Jincheng; Hao, Yue
• Is Part Of: Physica status solidi. Volume 216:Issue 20(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-08-22
• Subjects: breakdown voltage -- nanomembranes -- power figure of merit -- β-gallium oxide metal–oxide–semiconductor field-effect transistors; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201900421
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : Herein, a high‐performance β‐gallium oxide (β‐Ga2 O3 ) metal–oxide–semiconductor field‐effect transistor (MOSFET) on sapphire substrate with a high breakdown voltage of more than 800 V and a high‐power figure of merit of more than 86.3 MV cm −2 is demonstrated. The atomic force microscopy (AFM) image and Raman peaks that are first characterized to ensure a nanomembrane with high quality are used for the device fabrication. A saturation drain current of 231.8 mA mm −1, an R ON, sp of 7.41 mΩ cm 2, an ON/OFF ratio of 10 8, and a subthreshold swing of 86 mV dec −1 are obtained at a channel doping concentration of 4.47 × 10 17 cm −3 and a source‐to‐drain distance of 11.4 μm. Furthermore, a high breakdown voltage over 800 V is also achieved, corresponding to a record‐high direct current (DC) power figure of merit of 86.3 MW cm −2 . Technology computer aided design (TCAD) simulation is also performed to extract the distribution of the electric field along the β‐Ga2 O3 channel surface. Abstract : The fabrication and characterization of a β‐Ga2 O3 nanomembrane metal‐oxide‐semiconductor field‐effect transistor with sapphire substrate is discussed. The device shows a saturation current density of 231.8 mA mm −1, a specific on‐resistance of 7.41 mΩ cm 2, and a breakdown voltage of 800 V, corresponding to the high‐power figure of merit of 86.3 MW cm −2 . These outstanding electrical properties open up the possibility for power applications.