1. Analog parameters of solid source Zn diffusion InXGa1−XAs nTFETs down to 10 K. (28th October 2016) Authors: Bordallo, C; Martino, J A; Agopian, P G D; Alian, A; Mols, Y; Rooyackers, R; Vandooren, A; Verhulst, A S; Smets, Q; Simoen, E; Claeys, C; Collaert, N Journal: Semiconductor science and technology Issue: Volume 31:Number 12(2016:Dec.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Are Extended Defects a Show Stopper for Future III-V CMOS Technologies. (May 2019) Authors: Claeys, C; Hsu, P-C; He, L; Mols, Y; Langer, R; Waldron, N; Eneman, G; Collaert, N; Heyns, M; Simoen, E Journal: Journal of physics Issue: Volume 1190(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Assessment of DC and low-frequency noise performances of triple-gate FinFETs at cryogenic temperatures. (11th November 2016) Authors: Cretu, B; Boudier, D; Simoen, E; Veloso, A; Collaert, N Journal: Semiconductor science and technology Issue: Volume 31:Number 12(2016:Dec.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Observation and understanding of anisotropic strain relaxation in selectively grown SiGe fin structures. (9th March 2017) Authors: Schulze, A; Loo, R; Ryan, P; Wormington, M; Favia, P; Witters, L; Collaert, N; Bender, H; Vandervorst, W; Caymax, M Journal: Nanotechnology Issue: Volume 28:Number 14(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Parasitic subthreshold drain current and low frequency noise in GaN/AlGaN metal-oxide-semiconductor high-electron-mobility field-effect-transistors. (17th December 2020) Authors: Takakura, K; Putcha, V; Simoen, E; Alian, A R; Peralagu, U; Waldron, N; Parvais, B; Collaert, N Journal: Semiconductor science and technology Issue: Volume 36:Number 2(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Performance of differential pair circuits designed with line tunnel FET devices at different temperatures. (6th June 2018) Authors: Martino, M D V; Martino, J A; Agopian, P G D; Rooyackers, R; Simoen, E; Collaert, N; Claeys, C Journal: Semiconductor science and technology Issue: Volume 33:Number 7(2018:Jul.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Split CV mobility at low temperature operation of Ge pFinFETs fabricated with STI first and last processes. (13th October 2016) Authors: Oliveira, A V; Simoen, E; Agopian, P G D; Martino, J A; Mitard, J; Witters, L; Langer, R; Collaert, N; Thean, A; Claeys, C Journal: Semiconductor science and technology Issue: Volume 31:Number 11(2016:Nov.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Trap-assisted tunnelling and Shockley-Read-Hall lifetime of extended defects in In.53Ga.47As p+n junction. (May 2019) Authors: Hsu, P C (Brent); Simoen, E; Eneman, G; Merckling, C; Alian, A; Langer, R; Collaert, N; Heyns, M Journal: Journal of physics Issue: Volume 1190(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗