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Author/Creator Chini, Alessandro

4. Failure Physics and Reliability of GaN‐Based HEMTs for Microwave and Millimeter‐Wave Applications: A Review of Consolidated Data and Recent Results. Issue 24 (19th November 2022)

Authors:
Zanoni, Enrico; Rampazzo, Fabiana; De Santi, Carlo; Gao, Zhan; Sharma, Chandan; Modolo, Nicola; Verzellesi, Giovanni; Chini, Alessandro; Meneghesso, Gaudenzio; Meneghini, Matteo
Journal:
Physica status solidi
Issue:
Volume 219:Issue 24(2022)
Page Start:
n/a
Record Type:
Journal Article
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5. Study of threshold voltage instability in E‐mode GaN MOS‐HEMTs. Issue 5 (29th January 2016)

Authors:
Iucolano, Ferdinando; Parisi, Antonino; Reina, Santo; Meneghesso, G.; Chini, Alessandro
Other Names:
Zhang Guoyi sponsoringEditor.; Yu Tongjun sponsoringEditor.; Tang Ning sponsoringEditor.; Yang Xuelin sponsoringEditor.; Li Shunfeng sponsoringEditor.
Journal:
Physica status solidi
Issue:
Volume 13:Issue 5/6(2016:May)
Page Start:
321
Record Type:
Journal Article
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6. The Role of Carbon Doping on Breakdown, Current Collapse, and Dynamic On‐Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates. Issue 7 (10th December 2019)

Authors:
Zagni, Nicolò; Chini, Alessandro; Puglisi, Francesco Maria; Pavan, Paolo; Verzellesi, Giovanni
Other Names:
Shahedipour-Sandvik F. Shadi guestEditor.; Qhalid Fareed guestEditor.
Journal:
Physica status solidi
Issue:
Volume 217:Issue 7(2020)
Page Start:
n/a
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗