Experimental and numerical analysis of VTH and RON drifts in E-mode GaN HEMTs during switch-mode operation. (1st August 2019)

• Record Type: Journal Article
• Authors: Chini, Alessandro; Iucolano, Ferdinando
• Is Part Of: Materials science in semiconductor processing. Volume 98(2019)
• Page Start: 77
• Page End: 80
• Publication Date: 2019-08-01
• Subjects: GaN -- HEMTs -- RON degradation -- VTH shift; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2019.03.013
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: The evaluation and investigation of electrical parameters drifts during device operation is one of the mandatory task that has to be performed in order to improve GaN-power devices stability. In this work the authors would like to present novel results concerning the analysis of VTH and RON drifts in E-mode GaN HEMT observed during their switch-mode operation. Two different mechanisms are observed for the induced positive VTH shift. The first one is related to electron injection from the 2DEG into dielectric/semiconductor traps beneath the gate region of the device, while a second one linked to electron injection from the gate terminal induces a VTH shift linked to a localized negative trapping mechanism in the drain-edge of the gate terminal. The observed RON increase is instead linked to a hole-emission process taking place in the gate-drain access region within the device carbon-doped buffer layers. The negative charge build-up related to the ionized acceptor traps leads to the 2DEG depletion and consequent RON increase.