Experimental and numerical investigation of Poole–Frenkel effect on dynamic RON transients in C-doped p-GaN HEMTs. (20th December 2021)

• Record Type: Journal Article
• Authors: Zagni, Nicolò; Cioni, Marcello; Iucolano, Ferdinando; Moschetti, Maurizio; Verzellesi, Giovanni; Chini, Alessandro
• Is Part Of: Semiconductor science and technology. Volume 37:Number 2(2022)
• Publication Date: 2021-12-20
• Subjects: p-GaN HEMTs -- dynamic ON-resistance -- carbon doping -- Poole–Frenkel -- 'hole-redistribution' model; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/ac4113
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: In this paper, we investigate the influence of Poole–Frenkel effect (PFE) on the dynamic R ON transients in C-doped p-GaN HEMTs. To this aim, we perform a characterization of the dynamic R ON transients acquired during OFF-state stress (i.e. V GS, STR = 0 V < V T, V DS, STR = 25–125 V) and we interpret the results with the aid of numerical simulations. We find that dynamic R ON transients at room temperature accelerate with V DS, STR 1/2, which is signature of PFE, as further confirmed by the simultaneous decrease of the activation energy ( E A ) extracted from the Arrhenius plot of the dynamic R ON transients at V DS, STR = 50 V and T = 30 °C–110 °C. Results obtained by means of calibrated numerical simulations reproduce the exponential dependence of transients time constants ( τ ) on V DS, STR 1/2 and consequent E A reduction only when including the PFE-enhancement model of hole emission from dominant acceptor traps in the buffer related to C doping. This result is consistent with the 'hole-redistribution' model that considers hole emission from acceptor traps (rather than electron capture) as the mechanism underlying dynamic R ON increase during OFF-state stress.