Evolution of on-resistance (RON) and threshold voltage (VTH) in GaN HEMTs during switch-mode operation. (May 2018)

• Record Type: Journal Article
• Authors: Chini, Alessandro; Iucolano, Ferdinando
• Is Part Of: Materials science in semiconductor processing. Volume 78(2018)
• Page Start: 127
• Page End: 131
• Publication Date: 2018-05
• Subjects: GaN -- HEMTs -- RON degradation -- VTH shift; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2017.10.029
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: The evaluation and investigation of electrical parameters drifts during device operation is one of the mandatory task that has to be performed in order to improve GaN-power devices stability. In this work the authors would like to present a novel characterization method that allows the simultaneous monitoring of both RON and VTH during the switch-mode operation. By applying the proposed measurement method with different operating parameters it has been possible to provide a preliminary interpretation of the physical mechanisms leading to the observed RON increase and VTH positive shift. In particular, the observed RON increase, which is thermally activated with a 0.83 eV activation energy, has been ascribed to the presence of Carbon-related traps within the device buffer layer. On the other hand, the positive VTH shift has instead been related to interface defects at the dielectric/III–N interface and/or to bulk traps in the gate dielectric.