Search

Author/Creator Chen, Shoumian

3. Extraction and modeling of layout-dependent MOSFET gate-to-source/drain fringing capacitance in 40 nm technology. (September 2015)

Authors:
Sun, Lijie; Shang, Ganbing; Liu, Linlin; Cheng, Jia; Guo, Ao; Ren, Zheng; Hu, Shaojian; Chen, Shoumian; Zhao, Yuhang; Chan, Mansun; Zhang, Long; Li, Xiaojin; Shi, Yanling
Journal:
Solid-state electronics
Issue:
Volume 111(2015)
Page Start:
118
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗

4. Extraction and modeling of layout-dependent MOSFET gate-to-source/drain fringing capacitance in 40 nm technology. (September 2015)

Authors:
Sun, Lijie; Shang, Ganbing; Liu, Linlin; Cheng, Jia; Guo, Ao; Ren, Zheng; Hu, Shaojian; Chen, Shoumian; Zhao, Yuhang; Chan, Mansun; Zhang, Long; Li, Xiaojin; Shi, Yanling
Journal:
Solid-state electronics
Issue:
Volume 111(2015)
Page Start:
118
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗