TCAD‐based statistical modeling methodology for nanoscale FinFET variability. Issue 8 (23rd December 2019)

• Record Type: Journal Article
• Authors: Guo, Ao; Shang, Enming; Hu, Shaojian; Chen, Shoumian
• Is Part Of: Microwave and optical technology letters. Volume 63:Issue 8(2021)
• Page Start: 2097
• Page End: 2102
• Publication Date: 2019-12-23
• Subjects: compact model -- fin‐shaped field‐effect transistor -- process variation -- static random access memory -- statistical variability; Microwaves -- Periodicals; Optics -- Periodicals; 621
• DOI: 10.1002/mop.32217
• Languages: English
• ISSNs: 0895-2477

Abstract

Abstract: We demonstrated in this article a TCAD‐based (TCAD is defined as Technology Computer Aided Design) statistical modeling methodology for FinFET devices, which included TCAD Monte Carlo simulation, SPICE model library buildup, and model verification in circuit level. As a demonstrative example, a set of 14 nm FinFET devices are investigated for TCAD variability simulation and statistical model development. The stability and variability of different SRAM cells are further evaluated to verify the applicability of proposed statistical modeling methodology. The demonstrative statistical modeling method in this article is fully compatible with industrial standard methodology of CMOS device model, which can be easily immigrated into advanced technologies.