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2. Gamma‐Ray Irradiation Effect on Ferroelectric Devices with Hafnium Aluminum Oxides. Issue 12 (7th October 2019)

3. Improved Thermal Stability and Stress Immunity in Highly Scalable Junctionless FETs Using Enhanced-Depletion Channels. (1st January 2018)

4. Improved Thermal Stability and Stress Immunity in Highly Scalable Junctionless FETs Using Enhanced-Depletion Channels. (5th December 2018)

5. Investigation on polarization characteristics of ferroelectric memories with thermally stable hafnium aluminum oxides. (August 2019)

6. Stabilizing Ferroelectric Domain Switching of Hafnium Aluminum Oxide Using Metal Nitride Electrode Engineering. (17th September 2019)

7. Stabilizing Ferroelectric Domain Switching of Hafnium Aluminum Oxide Using Metal Nitride Electrode Engineering. (1st January 2019)