Gamma‐Ray Irradiation Effect on Ferroelectric Devices with Hafnium Aluminum Oxides. Issue 12 (7th October 2019)

• Record Type: Journal Article
• Authors: Liu, Chien; Tung, Yi-Chun; Wu, Tian-Li; Cheng, Chun-Hu; Tseng, Chih-Yang; Chen, Hsuan-Han; Chen, Hsi-Han; Ma, Jun; Lin, Chien-Liang; Zheng, Zhi-Wei; Chou, Wu-Ching; Hsu, Hsiao-Hsuan
• Is Part Of: Physica status solidi. Volume 13:Issue 12(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-10-07
• Subjects: endurance -- fatigue -- ferroelectric capacitors -- gamma-ray irradiation -- hafnium aluminum oxide; Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.201900414
• Languages: English
• ISSNs: 1862-6254

Abstract

Abstract : Herein, the gamma‐ray irradiation effect on ferroelectric HfAlO x capacitors for biomedical and space applications is investigated. The experimental results focus on the observation of ferroelectric polarization characteristics in support of different defect mechanisms induced by annealing, endurance cycling, and gamma‐ray irradiation. It is found that the HfAlO x with low Al doping of 6.5% become more vulnerable to radiation exposure, but a remarkable improvement in 9%‐Al‐doped HfAlO x due to less oxygen vacancies is demonstrated. In addition, the results also confirm that the fatigue property of ferroelectric HfAlO x capacitor is determined by the electric‐stress‐induced defect during endurance cycling, not mainly contributed by irradiation damage, which shows the potential for memory applications in rigorous irradiation environment. Abstract : Based on the investigation of gamma‐ray irradiation in ferroelectric HfAlO x capacitors, a remarkable improvement for enhancing the resistance to radiation exposure is confirmed in 9%‐Al‐doped HfAlO x due to less oxygen vacancies. In addition, it is also found that the fatigue property of ferroelectric HfAlO x capacitor is determined by the stress‐induced defect, not contributed by irradiation damage during endurance cycling.