Improved Thermal Stability and Stress Immunity in Highly Scalable Junctionless FETs Using Enhanced-Depletion Channels. (1st January 2018)

• Record Type: Journal Article
• Authors: Liu, Chien; Cheng, Chun-Hu; Lin, Ming-Huei; Shih, Yi-Jia; Hung, Yu-Wen; Fan, Chia-Chi; Chen, Hsuan-Han; Chen, Wan-Hsin; Hsu, Chih-Chieh; Shih, Bing-Yang; Chiu, Yu-Chien; Chou, Wu-Ching; Hsu, Hsiao-Hsuan; Chang, Chun-Yen
• Is Part Of: ECS journal of solid state science and technology. Volume 7:Number 12(2018)
• Page Start: Q242
• Page End: Q245
• Publication Date: 2018-01-01
• Subjects: Electron Devices -- Gate-All-Around -- Junctionless -- Nanowire; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0061812jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : In this work, we report a novel multi-PNPN-channel junctionless transistor with short channel length of 60nm. The multi-PNPN junctionless transistor exhibits the larger drive current of >1μA/μm, the steeper turn-on switching of 77 mV/decade, and the higher on/off current ratio of >10 7 than the hybrid PN channel device under the same gate overdrive. The improved performance is mainly attributed to the enhanced depletion effect of multi-PNPN channel to optimize the electric field modification of surface p-channel. The stronger immunity to constant-voltage stress is also obtained for multi-PNPN channel due to the lower lateral electric field near drain side to reduce the impact ionization ratio.