A p‐Type Ferroelectric Field‐Effect Transistor Using Ultrathin Hafnium Aluminum Oxide. Issue 12 (5th November 2020)

• Record Type: Journal Article
• Authors: Cheng, Chun-Hu; Liu, Chien; Tung, Yi-Chun; Chen, Hsuan-Han; Liao, Ruo-Yin; Chou, Wu-Ching
• Is Part Of: Physica status solidi. Volume 14:Issue 12(2020)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2020-11-05
• Subjects: capacitance matching -- doping -- ferroelectrics -- hafnium oxide -- transistors; Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.202000356
• Languages: English
• ISSNs: 1862-6254

Abstract

Abstract : Herein, the electrical characteristics of a p‐type negative‐capacitance field‐effect transistor are investigated using an ultrathin 2.5 nm‐thick HfAlO x . The optimized performance exhibits a steep subthreshold slope of 35 mV dec −1, a negligible hysteresis of 4 mV, and a low off‐state current of 3 × 10 −13 A μm −1 . Appropriate aluminum doping into HfAlO x film can not only improve the leakage current but also stabilize the negative‐capacitance matching. The prominent improvement on the capacitance matching and ferroelectricity can be ascribed to the reduced defect traps and less dielectric crystalline phase during annealing, which is important for the practical application of energy‐efficient logic devices. Abstract : A p‐type negative‐capacitance field‐effect transistor with an ultrathin 2.5 nm‐thick HfAlO x is demonstrated. The optimized characteristics of a steep subthreshold slope of 35 mV dec −1, a negligible hysteresis of 4 mV, and a low off‐state current of 3 × 10 −13 A μm −1 can be ascribed to the Al doping scheme, to effectively improve ferroelectric polarization, leakage current, and negative‐capacitance matching.