1. (Invited) Intrinsic Unipolar SiOx-Based Resistive Switching Memory: Characterization, Mechanism and Applications. (8th September 2015) Authors: Chang, Yao-Feng; Fowler, Burt; Zhou, Fei; Lee, Jack C. Journal: ECS transactions Issue: Volume 69:Number 5(2015) Page Start: 149 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. A study of the interfacial resistive switching mechanism by proton exchange reactions on the SiOx layer. Issue 2 (14th December 2015) Authors: Zhou, Fei; Chang, Yao-Feng; Chen, Ying-Chen; Wu, Xiaohan; Zhang, Ye; Fowler, Burt; Lee, Jack C. Journal: Physical chemistry chemical physics Issue: Volume 18:Issue 2(2016) Page Start: 700 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO2-based RRAM device with a vanadium electrode. Issue 25 (21st June 2017) Authors: Lin, Chih-Yang; Chen, Po-Hsun; Chang, Ting-Chang; Chang, Kuan-Chang; Zhang, Sheng-Dong; Tsai, Tsung-Ming; Pan, Chih-Hung; Chen, Min-Chen; Su, Yu-Ting; Tseng, Yi-Ting; Chang, Yao-Feng; Chen, Ying-Chen; Huang, Hui-Chun; Sze, Simon M. Journal: Nanoscale Issue: Volume 9:Issue 25(2017) Page Start: 8586 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Beyond SiOx: an active electronics resurgence and biomimetic reactive oxygen species production and regulation from mitochondria. Issue 47 (26th November 2018) Authors: Chang, Yao-Feng; Fowler, Burt; Chen, Ying-Chen; Lin, Chih-Yang; Xu, Gaobo; Huang, Hui-Chun; Chen, Jia; Kim, Sungjun; Li, Yi; Lee, Jack C. Journal: Journal of materials chemistry Issue: Volume 6:Issue 47(2018) Page Start: 12788 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Bifunctional HfOx-based Resistive Memory: Reprogrammable and One-Time Programmable (OTP) Memory. (1st June 2022) Authors: Chen, Ying-Chen; Chang, Yao-Feng; Lin, Chao-Cheng; Lin, Chang-Hsien Journal: ECS journal of solid state science and technology Issue: Volume 11:Number 6(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Built-In Nonlinear Characteristics of Low Power Operating One-Resistor Selector-Less RRAM by Stacking Engineering. (25th October 2017) Authors: Chen, Ying-Chen; Chang, Yao-Feng; Lin, Chih-Yang; Wu, Xiaohan; Xu, Gaobo; Fowler, Burt; Chang, Ting-Chang; Lee, Jack C. Journal: ECS transactions Issue: Volume 80:Number 10(2017) Page Start: 923 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Characterization of SiOx/HfOx Bilayer Resistive-Switching Memory Devices. (26th April 2016) Authors: Chen, Ying-Chen; Chang, Yao-Feng; Wu, Xiaohan; Guo, Meiqi; Fowler, Burt; Zhou, Fei; Pan, Chih-Hung; Chang, Ting-Chang; Lee, Jack C. Journal: ECS transactions Issue: Volume 72:Number 2(2016) Page Start: 25 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Complementary Metal‐Oxide Semiconductor and Memristive Hardware for Neuromorphic Computing. (14th April 2020) Authors: Rahimi Azghadi, Mostafa; Chen, Ying-Chen; Eshraghian, Jason K.; Chen, Jia; Lin, Chih-Yang; Amirsoleimani, Amirali; Mehonic, Adnan; Kenyon, Anthony J.; Fowler, Burt; Lee, Jack C.; Chang, Yao-Feng Journal: Advanced intelligent systems Issue: Volume 2:Number 5(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Complementary Metal‐Oxide Semiconductor and Memristive Hardware for Neuromorphic Computing. (20th May 2020) Authors: Rahimi Azghadi, Mostafa; Chen, Ying-Chen; Eshraghian, Jason K.; Chen, Jia; Lin, Chih-Yang; Amirsoleimani, Amirali; Mehonic, Adnan; Kenyon, Anthony J.; Fowler, Burt; Lee, Jack C.; Chang, Yao-Feng Journal: Advanced intelligent systems Issue: Volume 2:Number 5(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Dynamic conductance characteristics in HfOx-based resistive random access memory. Issue 21 (24th February 2017) Authors: Chen, Ying-Chen; Chang, Yao-Feng; Wu, Xiaohan; Zhou, Fei; Guo, Meiqi; Lin, Chih-Yang; Hsieh, Cheng-Chih; Fowler, Burt; Chang, Ting-Chang; Lee, Jack C. Journal: RSC advances Issue: Volume 7:Issue 21(2017) Page Start: 12984 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗