A study of the interfacial resistive switching mechanism by proton exchange reactions on the SiOx layer. Issue 2 (14th December 2015)

• Record Type: Journal Article
• Authors: Zhou, Fei; Chang, Yao-Feng; Chen, Ying-Chen; Wu, Xiaohan; Zhang, Ye; Fowler, Burt; Lee, Jack C.
• Is Part Of: Physical chemistry chemical physics. Volume 18:Issue 2(2016)
• Page Start: 700
• Page End: 703
• Publication Date: 2015-12-14
• Subjects: Chemistry, Physical and theoretical -- Periodicals; 541.3
• DOI: 10.1039/c5cp06507k
• Languages: English
• ISSNs: 1463-9076

Abstract

Abstract : Localized oxygen deficiency in the "GAP" region facilitated the proton exchange reactions in the SiO x layer and reproducible memory switching at 180 °C. Abstract : In this work, we investigated SiO x -based interfacial resistive switching in planar metal–insulator–metal structures using physical/chemical/electrical analyses. This work helps clarify the interfacial reaction process and mechanism in SiO x, and also shows the potential for high temperature operation in future nonvolatile memory applications.