Bifunctional HfOx-based Resistive Memory: Reprogrammable and One-Time Programmable (OTP) Memory. (1st June 2022)

• Record Type: Journal Article
• Authors: Chen, Ying-Chen; Chang, Yao-Feng; Lin, Chao-Cheng; Lin, Chang-Hsien
• Is Part Of: ECS journal of solid state science and technology. Volume 11:Number 6(2022)
• Publication Date: 2022-06-01
• Subjects: ReRAM -- self-rectify -- crossbar array -- non-volatile memory; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2162-8777/ac71c5
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : The dual functions in HfOx -based ReRAM and 2V-programmable via-fuse technology featuring in simple metal-insulator-metal BEOL process are presented, which can integrate with the current metal fuse technology. The impact of via-size, ReRAM, and via-fusing programming windows, stacked structures, and integration capability has been extensively studied. The performance and reliability risk assessments show that the ReRAM and via fuse can sustain at 438 K for 500 h without any degradation. Our results provide pathfinding of high density, integration capability, low programing voltage, multi-functionality between programmable read-only memory (PROM) and ReRAM co-existing in embedded applications.