51. RF and broadband noise investigation in High‐k/Metal Gate 28‐nm CMOS bulk transistor‡. (6th January 2014) Authors: Danneville, F.; Poulain, L.; Tagro, Y.; Lepilliet, S.; Dormieu, B.; Gloria, D.; Scheer, P.; Dambrine, G.; Crupi, Giovanni; Schreurs, Dominique; Caddemi, Alina Journal: International journal of numerical modelling Issue: Volume 27:Number 5/6(2014) Page Start: 736 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
52. Silicon‐on‐insulator MOSFETs models in analog/RF domain††. (28th November 2013) Authors: Raskin, Jean‐Pierre; Crupi, Giovanni; Schreurs, Dominique; Caddemi, Alina Journal: International journal of numerical modelling Issue: Volume 27:Number 5/6(2014) Page Start: 707 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
53. Straightforward modeling of dynamic I–V characteristics for microwave FETs. Issue 1 (8th April 2013) Authors: Avolio, Gustavo; Schreurs, Dominique M. M.‐P.; Raffo, Antonio; Crupi, Giovanni; Caddemi, Alina; Vannini, Giorgio; Nauwelaers, B. Journal: International journal of RF and microwave computer-aided engineering Issue: Volume 24:Issue 1(2014:Jan.) Page Start: 109 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
54. Subthreshold current modeling for fully depleted short channel double‐gate MOSFETs with consideration of structure asymmetry. (12th September 2013) Authors: Liu, Xi; Jin, Xiaoshi; Lee, Jong‐Ho; Crupi, Giovanni; Schreurs, Dominique; Caddemi, Alina Journal: International journal of numerical modelling Issue: Volume 27:Number 5/6(2014) Page Start: 875 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
55. Systematic experimental analysis of an optical sensing microwave low‐noise amplifier. Issue 15 (27th September 2019) Authors: Caddemi, Alina; Cardillo, Emanuele Journal: IET microwaves, antennas & propagation Issue: Volume 13:Issue 15(2019) Page Start: 2678 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
56. The correct account of nonzero differential conductance in the saturation regime in the MOSFET compact model. (29th January 2014) Authors: Turin, Valentin; Zebrev, Gennady; Makarov, Sergey; Iñiguez, Benjamin; Shur, Michael; Crupi, Giovanni; Schreurs, Dominique; Caddemi, Alina Journal: International journal of numerical modelling Issue: Volume 27:Number 5/6(2014) Page Start: 863 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
57. The large world of FET small‐signal equivalent circuits (invited paper). Issue 9 (17th August 2016) Authors: Crupi, Giovanni; Caddemi, Alina; Schreurs, Dominique M. M.‐P.; Dambrine, Gilles Journal: International journal of RF and microwave computer-aided engineering Issue: Volume 26:Issue 9(2016) Page Start: 749 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
58. Unified current modeling in low‐dimensional MOSFETs. (24th February 2014) Authors: Lakhlef, Ahcene; Benfdila, Arezki; Goudjil, Mohamed; Mokdad, Rabah; Crupi, Giovanni; Schreurs, Dominique; Caddemi, Alina Journal: International journal of numerical modelling Issue: Volume 27:Number 5/6(2014) Page Start: 908 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
59. Wave approach for noise modeling of gallium nitride high electron‐mobility transistors. (21st December 2015) Authors: Đorđević, Vladica; Marinković, Zlatica; Crupi, Giovanni; Pronić‐Rančić, Olivera; Marković, Vera; Caddemi, Alina Other Names: Raffo Antonio guestEditor. Journal: International journal of numerical modelling Issue: Volume 30:Number 1(2017) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
60. Wide temperature range SiGe HBT noise parameter modeling and LNA design for extreme environment Electronics. (13th February 2015) Authors: Niu, Guofu; Ma, Rongchen; Luo, Lan; Cressler, John D.; Caddemi, Alina; Caddemi, Ernesto Journal: International journal of numerical modelling Issue: Volume 28:Number 6(2015:Nov./Dec.) Page Start: 675 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗