Subthreshold current modeling for fully depleted short channel double‐gate MOSFETs with consideration of structure asymmetry. (12th September 2013)

• Record Type: Journal Article
• Authors: Liu, Xi; Jin, Xiaoshi; Lee, Jong‐Ho; Crupi, Giovanni; Schreurs, Dominique; Caddemi, Alina
• Is Part Of: International journal of numerical modelling. Volume 27:Number 5/6(2014)
• Page Start: 875
• Page End: 882
• Publication Date: 2013-09-12
• Subjects: Electric networks -- Mathematical models -- Periodicals; Electronics -- Mathematical models -- Periodicals; 621.3011
• DOI: 10.1002/jnm.1927
• Languages: English
• ISSNs: 0894-3370

Abstract

<abstract abstract-type="main"> <title>Abstract</title> <p>We have proposed a subthreshold current model for fully depleted short channel double‐gate (DG) MOSFETs by considering the structure asymmetry. Potential distribution is derived by solving 2‐D Poisson's equation using variable separation technique. The degraded subthreshold characteristics variations due to structure asymmetry such as the difference of oxide thicknesses or biases between front‐gate and back‐gate can be exactly described. Also, body doping and other deep nanoscale design parameters such as body thickness and channel length were considered. The models have been verified by comparing with device simulations' results and found very good agreement. Copyright © 2013 John Wiley &amp; Sons, Ltd.</p> </abstract>