The large world of FET small‐signal equivalent circuits (invited paper). Issue 9 (17th August 2016)

• Record Type: Journal Article
• Authors: Crupi, Giovanni; Caddemi, Alina; Schreurs, Dominique M. M.‐P.; Dambrine, Gilles
• Is Part Of: International journal of RF and microwave computer-aided engineering. Volume 26:Issue 9(2016)
• Page Start: 749
• Page End: 762
• Publication Date: 2016-08-17
• Subjects: equivalent circuit -- FET -- microwave frequency -- modeling -- scattering parameter measurements; Microwave devices -- Computer-aided design -- Periodicals; Computer-aided engineering -- Periodicals; 621.3813
• DOI: 10.1002/mmce.21028
• Languages: English
• ISSNs: 1096-4290

Abstract

Abstract: The small‐signal equivalent circuit modeling of microwave field‐effect transistors (FETs) is an evergreen and ever flourishing research field that has to be up‐to‐date with technological developments. Hence, modeling techniques must be continuously adapted and extended to suit best evolving technologies. The extraction of a FET high‐frequency small‐signal equivalent circuit is a very active and broad research area of significant interest, owing to its use as a prerequisite for noise and large‐signal modeling. The aim of this invited article is to provide in‐depth knowledge, critical understanding, and new insights into how to extract a FET small‐signal equivalent circuit from both theoretical and practical perspectives. To illustrate potential solutions to the key challenges faced by researchers, experimental results for different semiconductor technologies are reported and discussed. The study is focused on the hot research topic of the cold approach that has been, and still is, the most widely used technique for extracting FET small‐signal models and on the active role of the transconductance for successful modeling. © 2016 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2016.