1. Demonstration of higher electron mobility in Si nanowire MOSFETs by increasing the strain beyond 1.3%. (June 2015) Authors: Luong, G.V.; Knoll, L.; Blaeser, S.; Süess, M.J.; Sigg, H.; Schäfer, A.; Trellenkamp, S.; Bourdelle, K.K.; Buca, D.; Zhao, Q.T.; Mantl, S. Journal: Solid-state electronics Issue: Volume 108(2015) Page Start: 19 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Experimental demonstration of strained Si nanowire GAA n-TFETs and inverter operation with complementary TFET logic at low supply voltages. (January 2016) Authors: Luong, G.V.; Strangio, S.; Tiedemannn, A.; Lenk, S.; Trellenkamp, S.; Bourdelle, K.K.; Zhao, Q.T.; Mantl, S. Journal: Solid-state electronics Issue: Volume 115 Part B(2016) Page Start: 152 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Improved Tunnel-FET inverter performance with SiGe/Si heterostructure nanowire TFETs by reduction of ambipolarity. (June 2015) Authors: Richter, S.; Trellenkamp, S.; Schäfer, A.; Hartmann, J.M.; Bourdelle, K.K.; Zhao, Q.T.; Mantl, S. Journal: Solid-state electronics Issue: Volume 108(2015) Page Start: 97 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Superior performance and Hot Carrier reliability of strained FDSOI nMOSFETs for advanced CMOS technology nodes. (November 2015) Authors: Besnard, G.; Garros, X.; Andrieu, F.; Nguyen, P.; Van Den Daele, W.; Reynaud, P.; Schwarzenbach, W.; Delprat, D.; Bourdelle, K.K.; Reimbold, G.; Cristoloveanu, S. Journal: Solid-state electronics Issue: Volume 113(2015) Page Start: 127 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Understanding and optimizing the floating body retention in FDSOI UTBOX. (March 2016) Authors: Aoulaiche, M.; Simoen, E.; Caillat, C.; Witters, L.; Bourdelle, K.K.; Nguyen, B.-Y.; Martino, J.; Claeys, C.; Fazan, P.; Jurczak, M. Journal: Solid-state electronics Issue: Volume 117(2016) Page Start: 123 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Understanding and optimizing the floating body retention in FDSOI UTBOX. (March 2016) Authors: Aoulaiche, M.; Simoen, E.; Caillat, C.; Witters, L.; Bourdelle, K.K.; Nguyen, B.-Y.; Martino, J.; Claeys, C.; Fazan, P.; Jurczak, M. Journal: Solid-state electronics Issue: Volume 117(2016) Page Start: 123 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗