Superior performance and Hot Carrier reliability of strained FDSOI nMOSFETs for advanced CMOS technology nodes. (November 2015)

• Record Type: Journal Article
• Authors: Besnard, G.; Garros, X.; Andrieu, F.; Nguyen, P.; Van Den Daele, W.; Reynaud, P.; Schwarzenbach, W.; Delprat, D.; Bourdelle, K.K.; Reimbold, G.; Cristoloveanu, S.
• Is Part Of: Solid-state electronics. Volume 113(2015)
• Page Start: 127
• Page End: 131
• Publication Date: 2015-11
• Subjects: nMOSFET -- FDSOI -- Strained silicon -- sSOI -- Reliability -- Hot Carrier; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2015.05.021
• Languages: English
• ISSNs: 0038-1101

Abstract

Abstract: The Hot Carrier (HC) reliability of NMOS transistors fabricated on biaxially tensile-strain SOI substrates (sSOI) is compared to that of devices fabricated on standard unstrained SOI substrates. It is shown that sSOI-based devices not only exhibit a 10% higher performance in term of I ON / I OFF but also show superior HC reliability at same drive current. This reliability improvement may be explained by a better interface quality for sSOI films.