1. 2D Surface potential and mobility modelling of doped/undoped symmetric double gate MOSFET. Issue 5 (28th June 2019) Authors: Bose, Ria; Roy, J.N. Journal: IET circuits, devices & systems Issue: Volume 13:Issue 5(2019) Page Start: 571 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. A 2D channel potential modelling of symmetric double-gate MOSFET at onset of threshold condition. Issue 1 (2nd January 2021) Authors: Bose, Ria; Roy, J. N. Journal: International journal of electronics letters Issue: Volume 9:Issue 1(2021) Page Start: 14 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Analytical model and simulation‐based analysis of a work function engineered triple metal tunnel field‐effect transistor device showing excellent device performance. Issue 1 (13th December 2020) Authors: Bose, Ria; Roy, Jatindra Nath Journal: IET circuits, devices & systems Issue: Volume 15:Issue 1(2021) Page Start: 11 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Classical and quantum charge density model of nano scale doped DG MOSFETs below onset of strong inversion. (13th February 2019) Authors: Bose, Ria; Roy, J N Journal: Materials research express Issue: Volume 6:Number 5(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Evanescent mode based compact modelling of a dual‐metal double‐gate tunnel field‐effect transistor. Issue 7 (23rd October 2020) Authors: Bose, Ria; Roy, Jatindra Nath Journal: IET circuits, devices & systems Issue: Volume 14:Issue 7(2020) Page Start: 1032 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Three-Dimensional Channel Potential Model of a Triple Gate MOSFET based on Conformal Mapping Technique. Issue 3 (4th May 2022) Authors: Bose, Ria; Roy, J. N. Journal: IETE technical review Issue: Volume 39:Issue 3(2022) Page Start: 725 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗