A 2D channel potential modelling of symmetric double-gate MOSFET at onset of threshold condition. Issue 1 (2nd January 2021)

• Record Type: Journal Article
• Authors: Bose, Ria; Roy, J. N.
• Is Part Of: International journal of electronics letters. Volume 9:Issue 1(2021)
• Page Start: 14
• Page End: 24
• Publication Date: 2021-01-02
• Subjects: Channel potential -- DG MOSFET -- SCE -- Threshold voltage -- 2D TCAD simulation; Electronics -- Periodicals; Electronics; Periodicals; 621.38105
• DOI: 10.1080/21681724.2019.1661015
• Languages: English
• ISSNs: 2168-1732

Abstract

ABSTRACT: A two-dimensional (2D) channel potential distribution is analytically derived for lightly doped double-gate MOSFET at turn-on condition of the device by solving 2D Poisson's equation with the application of suitable boundary condition. Threshold voltage roll-off is also modelled to predict the short channel behaviour of the device at sub-threshold condition. Our derived model closely follows the 2D numerical simulation without the inclusion of any fitting parameters. It also serves as a basic step towards computing the compact modelling of DG MOSFET at threshold condition.