1. A Low Power Voltage Spike Detection Circuit for Cap-less LDO. Issue 3 (3rd July 2022) Authors: Manikandan, P.; Bindu, B. Journal: International journal of electronics letters Issue: Volume 10:Issue 3(2022) Page Start: 377 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. A Nested Miller Compensation with a large feed-forward transconductor for capacitor-less flipped voltage follower low dropout regulator. (November 2022) Authors: Manikandan, P.; Bindu, B. Journal: Microelectronics journal Issue: Volume 129(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. A Physics-Based Model of Double-Gate Tunnel FET for Circuit Simulation. Issue 3 (3rd May 2016) Authors: Narendiran, A.; Akhila, K.; Bindu, B. Journal: IETE journal of research Issue: Volume 62:Issue 3(2016) Page Start: 387 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. A Review on Circuit Simulation Techniques of Single-Event Transients and their Propagation in Delay Locked Loop. Issue 3 (4th May 2017) Authors: Pasupathy, K. R.; Bindu, B. Journal: IETE technical review Issue: Volume 34:Issue 3(2017) Page Start: 276 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Abstract PR169: Clinical Indicators of Outcome in Children with Cervical Spine Injury Requiring Anaesthetic and Intensive Care Management – A Retrospective Analysis. (September 2016) Authors: Singh, G. P.; Chauhan, V.; Rath, G. P.; Bindu, B. Journal: Anesthesia & analgesia Issue: Volume 123(2016:Sep.)Supplement 2 3S Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Low power, high speed carbon nanotube FET based level shifters for multi-VDD Systems-On-Chips. Issue 12 (December 2015) Authors: Pasupathy, K.R.; Bindu, B. Journal: Microelectronics journal Issue: Volume 46:Issue 12 Part A (2015) Page Start: 1269 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Modification of electrical properties of Au/n-type InP Schottky diode with a high-k Ba0.6Sr0.4TiO3 interlayer. (May 2016) Authors: Thapaswini, P. Prabhu; Padma, R.; Balaram, N.; Bindu, B.; Rajagopal Reddy, V. Journal: Superlattices and microstructures Issue: Volume 93(2016) Page Start: 82 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Modification of electrical properties of Au/n-type InP Schottky diode with a high-k Ba0.6Sr0.4TiO3 interlayer. (May 2016) Authors: Thapaswini, P. Prabhu; Padma, R.; Balaram, N.; Bindu, B.; Rajagopal Reddy, V. Journal: Superlattices and microstructures Issue: Volume 93(2016) Page Start: 82 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Sensitivity of SET Pulse-Width and Propagation to Radiation Track Parameters in CMOS Inverter Chain. Issue 6 (2nd November 2022) Authors: Pasupathy, K. R.; Bindu, B. Journal: IETE journal of research Issue: Volume 68:Issue 6(2022) Page Start: 4120 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗