Author/Creator: Bang, Suhyun - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Bang, Suhyun

1. Analytically and empirically consistent characterization of the resistive switching mechanism in a Ag conducting-bridge random-access memory device through a pseudo-liquid interpretation approach. Issue 48 (2nd December 2021)

Authors:: Choi, Yeon-Joon; Bang, Suhyun; Kim, Tae-Hyeon; Hong, Kyungho; Kim, Sungjoon; Kim, Sungjun; Cho, Seongjae; Park, Byung-Gook
Journal:: Physical chemistry chemical physics
Issue:: Volume 23:Issue 48(2021)
Page Start:: 27234
Record Type:: Journal Article
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2. Effect of Ag source layer thickness on the switching mechanism of TiN/Ag/SiNx/TiN conductive bridging random access memory observed at sub-µA current. (13th April 2021)

Authors:: Choi, Yeon-Joon; Bang, Suhyun; Kim, Tae-Hyeon; Lee, Dong Keun; Hong, Kyungho; Kim, Sungjun; Park, Byung-Gook
Journal:: Semiconductor science and technology
Issue:: Volume 36:Number 5(2021)
Page Start:
Record Type:: Journal Article
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3. Gradual switching and self-rectifying characteristics of Cu/α-IGZO/p+-Si RRAM for synaptic device application. (December 2018)

Authors:: Bang, Suhyun; Kim, Min-Hwi; Kim, Tae-Hyeon; Lee, Dong Keun; Kim, Sungjun; Cho, Seongjae; Park, Byung-Gook
Journal:: Solid-state electronics
Issue:: Volume 150(2018)
Page Start:: 60
Record Type:: Journal Article
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4. HfOx-based nano-wedge structured resistive switching memory device operating at sub-μA current for neuromorphic computing application. (25th March 2020)

Authors:: Lee, Dong Keun; Kim, Min-Hwi; Bang, Suhyun; Kim, Tae-Hyeon; Choi, Yeon-Joon; Kim, Sungjun; Cho, Seongjae; Park, Byung-Gook
Journal:: Semiconductor science and technology
Issue:: Volume 35:Number 5(2020)
Page Start:
Record Type:: Journal Article
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5. Highly uniform and reliable resistive switching characteristics of a Ni/WOx/p+-Si memory device. (February 2018)

Authors:: Kim, Tae-Hyeon; Kim, Sungjun; Kim, Hyungjin; Kim, Min-Hwi; Bang, Suhyun; Cho, Seongjae; Park, Byung-Gook
Journal:: Solid-state electronics
Issue:: Volume 140(2018)
Page Start:: 51
Record Type:: Journal Article
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6. Nano-cone resistive memory for ultralow power operation. (23rd February 2017)

Authors:: Kim, Sungjun; Jung, Sunghun; Kim, Min-Hwi; Kim, Tae-Hyeon; Bang, Suhyun; Cho, Seongjae; Park, Byung-Gook
Journal:: Nanotechnology
Issue:: Volume 28:Number 12(2017)
Page Start:
Record Type:: Journal Article
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7. Pulse area dependent gradual resistance switching characteristics of CMOS compatible SiNx-based resistive memory. (June 2017)

Authors:: Kim, Min-Hwi; Kim, Sungjun; Bang, Suhyun; Kim, Tae-Hyeon; Lee, Dong Keun; Cho, Seongjae; Lee, Jong-Ho; Park, Byung-Gook
Journal:: Solid-state electronics
Issue:: Volume 132(2017)
Page Start:: 109
Record Type:: Journal Article
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8. Ultralow power switching in a silicon-rich SiNy/SiNx double-layer resistive memory device. Issue 29 (12th July 2017)

Authors:: Kim, Sungjun; Chang, Yao-Feng; Kim, Min-Hwi; Bang, Suhyun; Kim, Tae-Hyeon; Chen, Ying-Chen; Lee, Jong-Ho; Park, Byung-Gook
Journal:: Physical chemistry chemical physics
Issue:: Volume 19:Issue 29(2017)
Page Start:: 18988
Record Type:: Journal Article
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