Pulse area dependent gradual resistance switching characteristics of CMOS compatible SiNx-based resistive memory. (June 2017)

• Record Type: Journal Article
• Authors: Kim, Min-Hwi; Kim, Sungjun; Bang, Suhyun; Kim, Tae-Hyeon; Lee, Dong Keun; Cho, Seongjae; Lee, Jong-Ho; Park, Byung-Gook
• Is Part Of: Solid-state electronics. Volume 132(2017)
• Page Start: 109
• Page End: 114
• Publication Date: 2017-06
• Subjects: Gradual resistance switching -- RRAM -- Pulse operation -- Synaptic device; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2017.03.015
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: Gradual DC and pulse operation of SiN x -based resistive memory was investigated. It is confirmed that resistance state of the memory cell can be controlled reliably. Pulse area dependent conductance change is demonstrated experimentally. Abstract: In this work, we investigated the gradual resistance switching phenomenon of our fabricated silicon nitride-based bipolar RRAM. By positive (set) and negative (reset) pulses applied between top electrode (TE) and bottom electrode (BE), the resistance state of the RRAM cell was delicately controlled. We checked the effect of pulse width, rise and fall time and pulse amplitude on the change of the resistance state. In conclusion, it is demonstrated that change of resistance state is determined by applied pulse area above a certain threshold voltage. The memory cell and gradual resistance change characteristics would be used to implement accurate and reliable synaptic devices in low power neuromorphic system.