Gradual switching and self-rectifying characteristics of Cu/α-IGZO/p+-Si RRAM for synaptic device application. (December 2018)

• Record Type: Journal Article
• Authors: Bang, Suhyun; Kim, Min-Hwi; Kim, Tae-Hyeon; Lee, Dong Keun; Kim, Sungjun; Cho, Seongjae; Park, Byung-Gook
• Is Part Of: Solid-state electronics. Volume 150(2018)
• Page Start: 60
• Page End: 65
• Publication Date: 2018-12
• Subjects: Gradual switching -- Self-rectification -- Resistive-switching random-access memory -- Amorphous indium gallium zinc oxide -- Synaptic device; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2018.10.003
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: RRAM using Cu/ α -IGZO/ p + -Si stack was fabricated and measured. Proposed device shows the self-rectifying phenomenon. Proposed device shows the gradual conductance change under identical voltage pulses. Abstract: In this work, we investigated the gradual switching and self-rectifying characteristics of Cu/ α -IGZO/ p + -Si resistive-switching random-access memory (RRAM) device. We fabricated the RRAM cells with Cu as the top electrode (TE) and heavily doped p -type silicon as the bottom electrode (BE), and amorphous indium gallium zinc oxide ( α -IGZO) film as the switching layer. In particular, we developed a bilayer IGZO film consisting of an oxygen-deficient layer and an oxygen-rich one by controlling the oxygen concentrations in the respective switching layers in the expectation of gradual switching owing to an oxygen vacancy reservoir. Fabricated RRAM cells successfully showed the typical hysteretic I – V curves including SET and RESET operations in the DC sweep mode. Furthermore, gradual switching and self-rectifying performances were observed. These characteristics are suitable to applications for synaptic devices toward the advanced neuromorphic systems.