Highly uniform and reliable resistive switching characteristics of a Ni/WOx/p+-Si memory device. (February 2018)

• Record Type: Journal Article
• Authors: Kim, Tae-Hyeon; Kim, Sungjun; Kim, Hyungjin; Kim, Min-Hwi; Bang, Suhyun; Cho, Seongjae; Park, Byung-Gook
• Is Part Of: Solid-state electronics. Volume 140(2018)
• Page Start: 51
• Page End: 54
• Publication Date: 2018-02
• Subjects: WOx RRAM -- Bipolar resistive switching -- Rapid thermal oxidation (RTO) -- MIS structure -- Space-charge-limited current (SCLC); Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2017.10.015
• Languages: English
• ISSNs: 0038-1101

Abstract

Abstract: In this paper, we investigate the resistive switching behavior of a bipolar resistive random-access memory (RRAM) in a Ni/WOx /p + -Si RRAM with CMOS compatibility. Highly unifrom and reliable bipolar resistive switching characteristics are observed by a DC voltage sweeping and its switching mechanism can be explained by SCLC model. As a result, the possibility of metal-insulator-silicon (MIS) structural WOx -based RRAM's application to Si-based 1D (diode)–1R (RRAM) or 1T (transistor)–1R (RRAM) structure is demonstrated.