Date: 2018 / Author/Creator: Bag, Ankush - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Date 2018 Author/Creator Bag, Ankush

1. Effect of trapped charge in AlGaN/GaN and AlGaN/InGaN/GaN heterostructure by temperature dependent threshold voltage analysis. (January 2018)

Authors:: Chakraborty, Apurba; Ghosh, Saptarsi; Mukhopadhyay, Partha; Das, Subhashis; Bag, Ankush; Biswas, Dhrubes
Journal:: Superlattices and microstructures
Issue:: Volume 113(2018)
Page Start:: 147
Record Type:: Journal Article
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2. Elimination of V-shaped pits in InGaN/GaN/AlN/GaN heterostructure by metal modulation growth technique. (5th February 2018)

Authors:: Chakraborty, Apurba; Bag, Ankush; Mukhopadhyay, Partha; Ghosh, Saptarsi; Biswas, Dhrubes
Journal:: Semiconductor science and technology
Issue:: Volume 33:Number 3(2018:Mar.)
Page Start:
Record Type:: Journal Article
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3. Evolution of lateral V-defects on InGaN/GaN on Si(111) during PAMBE: the role of strain on defect kinetics. Issue 29 (4th July 2018)

Authors:: Bag, Ankush; Das, Subhashis; Kumar, Rahul; Biswas, Dhrubes
Journal:: CrystEngComm
Issue:: Volume 20:Issue 29(2018)
Page Start:: 4151
Record Type:: Journal Article
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4. Observation and analysis of kink effect during drain current inception of GaN HEMT. (August 2018)

Authors:: Bag, Ankush; Das, Subhashis; Mukhopadhyay, Partha; Biswas, Dhrubes
Journal:: Superlattices and microstructures
Issue:: Volume 120(2018)
Page Start:: 101
Record Type:: Journal Article
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