1. Another development challenge: gaining emancipation from a functional hegemony in accounting and management control research. Issue 1 (5th November 2020) Authors: Alam, Saiful; Ranasinghe, Seuwandhi B.; Wickramasinghe, Danture Journal: Journal of accounting in emerging economies Issue: Volume 11:Issue 1(2021) Page Start: 27 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Design of step-graded AlGaN buffers for GaN-on-Si heterostructures grown by MOCVD. (1st April 2023) Authors: Ghosh, Saptarsi; Hinz, Alexander M; Frentrup, Martin; Alam, Saiful; Wallis, David J; Oliver, Rachel A Journal: Semiconductor science and technology Issue: Volume 38:Number 4(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Emission wavelength red-shift by using "semi-bulk" InGaN buffer layer in InGaN/InGaN multiple-quantum-well. (December 2017) Authors: Alam, Saiful; Sundaram, Suresh; Li, Xin; El Gmili, Youssef; Elouneg-Jamroz, Miryam; Robin, Ivan Christophe; Patriarche, Gilles; Salvestrini, Jean-Paul; Voss, Paul L.; Ougazzaden, Abdallah Journal: Superlattices and microstructures Issue: Volume 112(2017) Page Start: 279 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Gas sensors boosted by two-dimensional h-BN enabled transfer on thin substrate foils: towards wearable and portable applications. Issue 1 (December 2017) Authors: Ayari, Taha; Bishop, Chris; Jordan, Matthew; Sundaram, Suresh; Li, Xin; Alam, Saiful; ElGmili, Youssef; Patriarche, Gilles; Voss, Paul; Salvestrini, Jean; Ougazzaden, Abdallah Journal: Scientific reports Issue: Volume 7:Issue 1(2017) Page Start: 1 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Influence of barrier layer indium on efficiency and wavelength of InGaN multiple quantum well (MQW) with and without semi‐bulk InGaN buffer for blue to green regime emission. Issue 8 (9th March 2017) Authors: Alam, Saiful; Sundaram, Suresh; li, Xin; Jamroz, Miryam E.; El Gmili, Youssef; Robin, Ivan C.; Voss, Paul L.; Salvestrini, Jean‐Paul; Ougazzaden, Abdallah Journal: Physica status solidi Issue: Volume 214:Issue 8(2017) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. InGaN/InGaN multiple-quantum-well grown on InGaN/GaN semi-bulk buffer for blue to cyan emission with improved optical emission and efficiency droop. (April 2017) Authors: Alam, Saiful; Sundaram, Suresh; Elouneg-Jamroz, Miryam; Li, Xin; El Gmili, Youssef; Robin, Ivan Christophe; Voss, Paul L.; Salvestrini, Jean-Paul; Ougazzaden, Abdallah Journal: Superlattices and microstructures Issue: Volume 104(2017) Page Start: 291 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Investigation of p‐contact performance for indium rich InGaN based light emitting diodes and solar cells. Issue 4 (17th November 2016) Authors: Alam, Saiful; Sundaram, Suresh; Haas, Helge; Li, Xin; El Gmili, Youssef; Jamroz, Miryam E.; Robin, Ivan C.; Voss, Paul L.; Salvestrini, Jean‐Paul; Ougazzaden, Abdallah Journal: Physica status solidi Issue: Volume 214:Issue 4(2017) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Large‐Area van der Waals Epitaxial Growth of Vertical III‐Nitride Nanodevice Structures on Layered Boron Nitride. Issue 16 (19th June 2019) Authors: Sundaram, Suresh; Li, Xin; Halfaya, Yacine; Ayari, Taha; Patriarche, Gilles; Bishop, Christopher; Alam, Saiful; Gautier, Simon; Voss, Paul L.; Salvestrini, Jean Paul; Ougazzaden, Abdallah Journal: Advanced materials interfaces Issue: Volume 6:Issue 16(2019) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Light‐Emitting Diodes: Large‐Area van der Waals Epitaxial Growth of Vertical III‐Nitride Nanodevice Structures on Layered Boron Nitride (Adv. Mater. Interfaces 16/2019). Issue 16 (23rd August 2019) Authors: Sundaram, Suresh; Li, Xin; Halfaya, Yacine; Ayari, Taha; Patriarche, Gilles; Bishop, Christopher; Alam, Saiful; Gautier, Simon; Voss, Paul L.; Salvestrini, Jean Paul; Ougazzaden, Abdallah Journal: Advanced materials interfaces Issue: Volume 6:Issue 16(2019) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Mg doping of 3D semipolar InGaN/GaN‐based light emitting diodes. Issue 11 (14th August 2014) Authors: Wang, Junjun; Gao, Yumin; Alam, Saiful; Scholz, Ferdinand Journal: Physica status solidi Issue: Volume 211:Issue 11(2014:Nov.) Page Start: 2645 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗