Light‐Emitting Diodes: Large‐Area van der Waals Epitaxial Growth of Vertical III‐Nitride Nanodevice Structures on Layered Boron Nitride (Adv. Mater. Interfaces 16/2019). Issue 16 (23rd August 2019)

• Record Type: Journal Article
• Authors: Sundaram, Suresh; Li, Xin; Halfaya, Yacine; Ayari, Taha; Patriarche, Gilles; Bishop, Christopher; Alam, Saiful; Gautier, Simon; Voss, Paul L.; Salvestrini, Jean Paul; Ougazzaden, Abdallah
• Is Part Of: Advanced materials interfaces. Volume 6:Issue 16(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-08-23
• Subjects: 2D boron nitride -- core/shell nanostructures -- flexible electronics -- nanorods -- semiconductors -- van der Waals epitaxy; Materials science -- Periodicals; 620.11
• DOI: 10.1002/admi.201970102
• Languages: English
• ISSNs: 2196-7350

Abstract

Abstract : In article number1900207, Suresh Sundaram, Abdallah Ougazzaden, and co‐workers demonstrate self‐organized GaN nanorods formation on layered h‐BN templates by van der Waals epitaxial growth. This approach is used to grow III‐N nanowire light‐emitting diodes. In addition, this approach also mitigates transfer processes and scaling issues seen with other 2D materials, since both the 1D (GaN nanorods) and 2D (h‐BN) are grown at the wafer‐scale and in one epitaxial growth run.