Mg doping of 3D semipolar InGaN/GaN‐based light emitting diodes. Issue 11 (14th August 2014)

• Record Type: Journal Article
• Authors: Wang, Junjun; Gao, Yumin; Alam, Saiful; Scholz, Ferdinand
• Is Part Of: Physica status solidi. Volume 211:Issue 11(2014:Nov.)
• Page Start: 2645
• Page End: 2649
• Publication Date: 2014-08-14
• Subjects: Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201431369
• Languages: English
• ISSNs: 1862-6300

Abstract

<abstract abstract-type="main"> <title> <x xml:space="preserve">Abstract</x> </title> <sec id="pssa201431369-sec-0001" sec-type="section"> <p>The effects of different Mg doping concentrations in the main p‐GaN layer and the p‐GaN capping layer on the electroluminescence (EL) properties of three‐dimensional semipolar InGaN/GaN light emitting diode structures grown on GaN stripes with triangular cross‐section were investigated. Secondary ion mass spectrometry analysis revealed the Mg concentration of the 3D semipolar p‐GaN, indicating a higher Mg incorporation efficiency on the <inline-formula><alternatives><inline-graphic mimetype="image" xlink:href="ark:/27927/pgh2ckt2mv1" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /><mml:math altimg="urn:x-wiley:18626300:media:pssa201431369:pssa201431369-math-0001" display="inline" overflow="scroll" xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mo>{</mml:mo><mml:mn>10</mml:mn><mml:mover accent="true"><mml:mn>1</mml:mn><mml:mo>¯</mml:mo></mml:mover><mml:mn>1</mml:mn><mml:mo>}</mml:mo></mml:mrow></mml:math></alternatives></inline-formula> facet as compared to the <inline-formula><alternatives><inline-graphic mimetype="image" xlink:href="ark:/27927/pgh2ckt2mwk" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /><mml:math altimg="urn:x-wiley:18626300:media:pssa201431369:pssa201431369-math-0002" display="inline" overflow="scroll" xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mo>{</mml:mo><mml:mn>11</mml:mn><mml:mover accent="true"><mml:mn>2</mml:mn><mml:mo>¯</mml:mo></mml:mover><mml:mn>2</mml:mn><mml:mo>}</mml:mo></mml:mrow></mml:math></alternatives></inline-formula> facet. The EL output power is low with a too low Mg concentration of 3 × 10<sup>19</sup> cm<sup>−3</sup>, probably due to the inferior hole injection efficiency and stays almost constant with the Mg concentration ranging from 4 × 10<sup>19</sup> cm<sup>−3</sup> until 1.3 × 10<sup>20</sup> cm<sup>−3</sup> for the 3D LEDs with the <inline-formula><alternatives><inline-graphic mimetype="image" xlink:href="ark:/27927/pgh2ckt2mfd" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /><mml:math altimg="urn:x-wiley:18626300:media:pssa201431369:pssa201431369-math-0003" display="inline" overflow="scroll" xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mo>{</mml:mo><mml:mn>10</mml:mn><mml:mover accent="true"><mml:mn>1</mml:mn><mml:mo>¯</mml:mo></mml:mover><mml:mn>1</mml:mn><mml:mo>}</mml:mo></mml:mrow></mml:math></alternatives></inline-formula> facet. Heavy Mg doping in the p‐GaN capping layer is required to achieve good ohmic contact performance.</p> </sec> </abstract>