Design analysis of polarization-doped N-face InGaN/GaN light-emitting diodes with different AlxGa1−xN graded layers. (January 2015)

• Record Type: Journal Article
• Authors: Yang, G.F.; Tong, Y.Y.; Xie, F.; Yan, D.W.; Wang, F.X.
• Is Part Of: Materials science in semiconductor processing. Volume 29(2015:Jan.)
• Page Start: 362
• Page End: 366
• Publication Date: 2015-01
• Subjects: N-face -- Light-emitting diodes -- Polarization doping -- Numerical study; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2014.07.021
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: The polarization-doped N-face blue InGaN/GaN light-emitting diodes (LEDs) with different Al content in the p-type graded Al x Ga1− x N layers are investigated numerically, and the polarization-doped Ga-face LED with the same structure is simultaneously simulated for comparison. The proposed N-face LEDs with low content in the graded Al x Ga1− x N layer exhibit significant improvement for the light output power and hole injection efficiency at high applied voltages compared with the Ga-face counterpart. The enhanced performance for the N-face polarization-doped LEDs is explained by the simulated energy band diagrams, distribution of electric field, carrier concentration and radiative recombination rate in the quantum wells.