Cite
HARVARD Citation
Yang, G. et al. (n.d.). Design analysis of polarization-doped N-face InGaN/GaN light-emitting diodes with different AlxGa1−xN graded layers. Materials science in semiconductor processing. pp. 362-366. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Yang, G. et al. (n.d.). Design analysis of polarization-doped N-face InGaN/GaN light-emitting diodes with different AlxGa1−xN graded layers. Materials science in semiconductor processing. pp. 362-366. [Online].